Infineon IPL65R070C7: A High-Performance 700V Superjunction MOSFET for Efficient Power Conversion
The relentless pursuit of higher efficiency and power density in modern power electronics drives the continuous innovation in semiconductor technology. At the forefront of this evolution are Superjunction (SJ) MOSFETs, which have redefined the performance benchmarks for high-voltage switching applications. The Infineon IPL65R070C7 stands as a prime example of this advanced technology, offering engineers a superior 700V component designed to maximize efficiency in demanding power conversion systems.
This MOSFET is engineered using Infineon's proprietary CoolMOS™ C7 superjunction technology, a platform renowned for its exceptional combination of low switching losses and high ruggedness. The core achievement of this technology is its ability to drastically reduce the device's on-state resistance (RDS(on)) for a given silicon area. The IPL65R070C7 boasts an impressively low maximum RDS(on) of just 0.070 Ω, which is a key factor in minimizing conduction losses. This translates directly into higher efficiency, as less energy is wasted as heat during the period the switch is on.
Beyond low conduction losses, the device excels in dynamic performance. Its low gate charge (Qg) and small reverse recovery charge (Qrr) are critical parameters that contribute to minimal switching losses. This allows for operation at higher switching frequencies without a punitive efficiency penalty. For system designers, this is a significant advantage: higher switching frequencies enable the use of smaller, lighter, and more cost-effective passive components like transformers, inductors, and capacitors. Consequently, the IPL65R070C7 is an ideal choice for compact and high-power-density designs, including server and telecom SMPS (Switch-Mode Power Supplies), industrial motor drives, and power factor correction (PFC) stages.
Furthermore, the 700V voltage rating provides a robust safety margin for operation in universal mains applications (85 VAC – 305 VAC). This enhanced headroom improves system reliability by offering superior resilience against voltage spikes and transients that are common in grid-connected environments. The technology also features an integrated fast body diode, which enhances its hard commutation ruggedness, making it well-suited for topologies like power factor correction that experience stressful switching conditions.
In summary, the Infineon IPL65R070C7 is not just a MOSFET; it is a high-performance engine for efficient power conversion. Its optimized trade-off between low RDS(on) and outstanding switching characteristics empowers designers to push the boundaries of what is possible in terms of efficiency, power density, and overall system cost.
ICGOODFIND: The Infineon IPL65R070C7 leverages advanced CoolMOS™ C7 SJ technology to deliver an optimal blend of ultra-low conduction losses and minimized switching losses, making it a top-tier solution for building highly efficient, compact, and reliable high-voltage power conversion systems.
Keywords: Superjunction MOSFET, High Efficiency, Low RDS(on), Power Density, CoolMOS™ C7
