Infineon BSZ440N10NS3G: 100V N-Channel MOSFET for High-Efficiency Power Conversion
The relentless pursuit of higher efficiency and power density in modern electronic systems places immense demands on power switching components. At the heart of many advanced power conversion designs, from high-frequency DC-DC converters to robust motor control systems, lies the MOSFET. The Infineon BSZ440N10NS3G stands out as a premier 100V N-Channel MOSFET engineered specifically to meet these challenges, offering a compelling blend of performance, reliability, and integration.
A key differentiator of this component is its advanced OptiMOS™ technology. This proprietary platform from Infineon is renowned for achieving an exceptional balance between low on-state resistance (R DS(on)) and low gate charge (Q G). The BSZ440N10NS3G exemplifies this, featuring an ultra-low R DS(on) of just 4.4 mΩ (max. at V GS = 10 V). This minimized resistance directly translates to reduced conduction losses, allowing for more current to be handled with significantly less energy wasted as heat. This is paramount for increasing the overall efficiency of a power stage, whether it is in a synchronous rectification block or a primary switch.
Complementing its low conduction losses are its superior switching characteristics. The low gate charge ensures swift turn-on and turn-off times, which drastically reduces switching losses, especially critical in high-frequency applications. This capability allows designers to push switching frequencies higher, enabling the use of smaller passive components like inductors and capacitors, thereby increasing power density and reducing the overall system footprint and cost.
The device is housed in a SuperSO8 package, which offers a number of significant advantages. This package features an extremely low parasitic inductance, which is vital for minimizing voltage overshoot and ringing during fast switching transitions, leading to cleaner operation and enhanced reliability. Furthermore, its superior thermal performance compared to standard SO-8 packages ensures that heat is effectively dissipated from the silicon, supporting higher continuous current handling (I D max up to 30 A) and improved operational robustness in demanding environments.
Designed with a focus on reliability, the BSZ440N10NS3G boasts a high avalanche ruggedness and an extended safe operating area (SOA), providing designers with a greater margin of safety against unexpected voltage transients and overload conditions. Its qualification for industrial and automotive applications underscores its quality and durability.
ICGOODFIND: The Infineon BSZ440N10NS3G is a top-tier 100V N-Channel MOSFET that sets a high bar for performance in power conversion. Its industry-leading low R DS(on) within the SuperSO8 package, combined with the fast-switching benefits of OptiMOS™ technology, makes it an ideal solution for maximizing efficiency and power density in a wide array of demanding applications, from server and telecom power supplies to automotive systems and beyond.
Keywords: OptiMOS™ Technology, Low R DS(on), SuperSO8 Package, High-Efficiency Power Conversion, Switching Performance.
