Infineon IPW65R150CFD: A High-Performance 650V CoolMOS™ CFD2 Power Transistor

In the relentless pursuit of higher efficiency and power density in modern electronic systems, the choice of power switching device is paramount. The Infineon IPW65R150CFD stands out as a premier solution, engineered to meet the demanding requirements of applications such as server and telecom SMPS, industrial power supplies, and solar inverters. As part of Infineon's esteemed CoolMOS™ CFD2 family, this 650V superjunction MOSFET is designed to push the boundaries of performance.

The core of this transistor's superiority lies in its revolutionary Charge Compensation Principle. This technology enables an exceptionally low on-state resistance (RDS(on)) of just 150mΩ (max. @ 25°C) while maintaining minimal gate charge (Qg). This optimal RDS(on) x Qg figure of merit (FOM) is a critical achievement, as it directly translates to significantly reduced switching and conduction losses. For designers, this means systems can operate at higher frequencies with improved thermal performance, leading to the possibility of smaller magnetics and heat sinks, and thus, higher overall power density.

A defining feature of the CFD2 series, and a key strength of the IPW65R150CFD, is the integrated fast body diode. This is not a mere parasitic element but a carefully engineered component. It offers exceptional reverse recovery characteristics (softness and low Qrr), which is crucial for hard-switching topologies like power factor correction (PFC) circuits. This robust diode drastically reduces switching losses during diode commutation and enhances the reliability of the system by minimizing voltage overshoot and electromagnetic interference (EMI).

Furthermore, the device boasts excellent switching behavior and high dv/dt capability, ensuring stable and predictable performance under demanding conditions. Its avalanche ruggedness provides an additional layer of safety, allowing it to withstand unexpected voltage spikes. Housed in a TO-247 package, it offers a familiar and robust form factor with excellent thermal properties for efficient heat dissipation.

ICGOOODFIND: The Infineon IPW65R150CFD is a benchmark in high-voltage power switching. Its unparalleled combination of ultra-low RDS(on), superior switching performance, and a robust integrated fast body diode makes it an ideal choice for engineers aiming to maximize efficiency and power density in next-generation power conversion systems.

Keywords: CoolMOS™ CFD2, Low RDS(on), Fast Body Diode, High Efficiency, Power Density.