Infineon SPP04N80C3 800V CoolMOS™ Power Transistor: Datasheet, Application Notes, and Design Considerations

The Infineon SPP04N80C3 is an 800V N-channel power MOSFET belonging to Infineon’s renowned CoolMOS™ C3 series, a technology platform optimized for high efficiency and reliability in switched-mode power supplies (SMPS) and other power conversion applications. Combining high voltage capability with low switching losses and excellent thermal performance, this transistor is widely used in industrial, consumer, and computing applications.

Key Features from the Datasheet

The datasheet highlights several critical parameters that define the component’s performance. The 800V drain-source voltage (VDS) ensures robust operation in high-voltage environments, providing ample margin for overloads and surges. With an RDS(on) of 450 mΩ (max) at 25°C, the device offers low conduction losses, contributing to higher system efficiency. The CoolMOS™ C3 superjunction technology significantly reduces switching losses, making it suitable for high-frequency operations. Additionally, the transistor features low gate charge (Qg) and fast switching capabilities, which help minimize driving losses and improve thermal behavior.

Application Notes

The SPP04N80C3 is ideal for use in flyback and forward converters, power factor correction (PFC) stages, and LED lighting drivers. In PFC circuits, its high voltage rating and low losses support efficient operation at universal input voltages (85–265 VAC). For flyback converters in adapters and auxiliary power supplies, the low RDS(on) and good switching performance help achieve compact designs with reduced heat dissipation. When designing gate driving circuits, it is essential to ensure sufficient drive voltage (typically 10–15V) and to use a series gate resistor to control turn-on/off speed and avoid oscillations.

Important Design Considerations

Thermal management is crucial for maximizing performance and longevity. Although the CoolMOS™ technology reduces losses, proper heatsinking and PCB layout are necessary to keep the junction temperature within safe limits. Designers should minimize parasitic inductance in high-current loops to suppress voltage spikes during switching. Moreover, snubber circuits may be required in some applications to dampen ringing and reduce EMI. Careful attention to the layout—especially the gate drive path and high-voltage isolation—is recommended to avoid unintended coupling and ensure stable operation.

ICGOOODFIND:

The Infineon SPP04N80C3 800V CoolMOS™ transistor stands out for its high voltage robustness, low switching losses, and efficiency, making it a top choice for modern power supply designs. Its well-balanced characteristics support both performance and reliability in demanding applications.

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Keywords: CoolMOS™ C3, Power Transistor, 800V MOSFET, Switching Losses, Power Supply Design